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本论文采用双离子束溅射沉积技术制备了非晶的SiOx薄膜,XPS的测试表明Si是以单原子或低价氧化物的形态存在于薄膜内;在波长为240nm紫外光的激发下,室温及1000℃退火后SiOx薄膜的PL谱图显示样品中存在峰位分别处于320nm,410nm,560nm,630nm四个相互分离的峰,其发光机制分别为来自中性氧空位缺陷(≡Si-O-O-Si≡)、双配位硅悬挂键(O-Si-O)、非桥氧空位中心以及其他缺陷所形成的发光中心。
In this thesis, an amorphous SiOx thin film was prepared by dual ion beam sputtering deposition. The XPS test showed that Si was present in the film as a single atom or as a low-valent oxide. Under the excitation of UV light with a wavelength of 240 nm, And PL spectra of SiOx thin films annealed at 1000 ℃ show that there are four peaks separated from each other at 320nm, 410nm, 560nm and 630nm, respectively. The luminescence mechanism of the SiOx films is respectively from the neutral oxygen vacancy defects (≡Si-OO- Si≡), double-bonded silicon dangling bonds (O-Si-O), non-bridging oxygen vacancy centers and other defects.