0.5μm厚的多晶硅膜淀积在热生长的SiO_2上。淀积源是SiH_4,而氮气是用来稀释周围气氛的。杂质硼和磷原子分别以70和170KeV的能量注入,以便使注入深度达到膜厚的一半。注入剂量为1×10~(12)到1×10~(15)cm~(-2)。所有的样品在1000℃下热处理30分钟,目的是减少由离子注入引起的损伤并使杂质均匀地分布在多晶硅中以便使掺杂浓度可以描述为剂量与膜厚的关 A 0.5 μm-thick polysilicon film is deposited on the thermally grown SiO 2. The source of deposition is SiH 4, and nitrogen is used to dilute the surrounding atmosphere. The impurity boron and phosphorus atoms were implanted with energies of 70 and 170 KeV, respectively, so that the implantation depth reached half the film thickness. The injection dose is 1 × 10 ~ (12) to 1 × 10 ~ (15) cm ~ (-2). All samples were heat-treated at 1000 ° C for 30 minutes in order to reduce damage caused by ion implantation and to evenly distribute the impurities in the polycrystalline silicon so that the doping concentration can be described as a dose-to-