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本文介绍了G波段限幅、低噪声场放组合的研制结果。我们采用国产WC-50型砷化镓场效应晶体管(GaAs FET),通过对该管S参数测试后进行电路设计。已制成限幅、级联场效应放大器组合作为某雷达接收机低噪声前端。整个组合采用混合集成电路工艺,制作在50毫米×90毫米×1毫米的氧化铝陶瓷基片上。实现G波段整机的最佳指标是:系统噪声系数3.5分贝(包括前置限幅器、隔离器、波导-同轴转换和后置高中频接收机噪声在内),组合增益≥20分贝,带宽10％。对该组合作过各项例行试验,它均能满足要求,文中还介绍了发射机泄漏波尖能量的测量方法和放电管运用中的注意事项。在采取若干保护措施后,已将其作为接收机前端,自1981年1月起装入整机,已装备多部整机,提高了整机性能,展示了良好的前程。近年来采用WC-61、FLS-10型GaAs FET管制作的场放组合,其噪声性能更佳。
This article describes the G-band limiting, low noise field combination of the development of results. We use domestic WC-50 gallium arsenide field-effect transistor (GaAs FET), through the tube S-parameter test circuit design. Has been made limited, cascaded field effect amplifier combination as a radar receiver low-noise front-end. The entire assembly is fabricated on a hybrid integrated circuit process on a 50 mm x 90 mm x 1 mm alumina ceramic substrate. The best indicator to realize the whole G-band machine is that the system noise figure is 3.5dB (including the pre-limiter, isolator, waveguide-coaxial conversion and post-high IF receiver noise), the combined gain is ≥20dB, Bandwidth 10%. The group has done various routine tests, it can meet the requirements, the article also introduced the transmitter leakage spike energy measurement methods and discharge tube considerations. After taking a number of protective measures, it has been used as the front end of the receiver. Since January 1981, it has been installed in the complete machine and has been equipped with more complete sets of machines to improve overall performance and show a good future. In recent years, using WC-61, FLS-10 GaAs FET tube made of field combinations, the noise performance is better.