引进一种砷扩散的亚微米发射极,得以研制出在4千兆赫下最小噪声系数为2分贝、相应的功率增益为9.5分贝的硅微波晶体管。为了使低噪声微波晶体管有可能实现,最重要的因素之一就是使通常的制造技术达到最佳化。 The introduction of arsenic-diffused submicron emitter led to the development of a silicon microwave transistor with a minimum noise figure of 2 dB at 4 GHz and a corresponding power gain of 9.5 dB. In order to make low-noise microwave transistors possible, one of the most important factors is the optimization of the usual manufacturing techniques.