一、引言 多晶硅作为一种压阻材料,可以通过化学汽相淀积工艺淀积在陶瓷,玻璃,SiO_2,Si_3N4等绝缘材料上,从而制造出一种SOI结构的压力传感器,选种特性为高温压力传感器和更为灵敏的触敏传感器提供可靠的工艺基础。 多晶硅压力传感器避免了扩散型压力传感器的pn结漏电问题,展宽了器件的工作温度范围,高温可达200℃。同时多晶硅电阻的温度系数随掺杂浓度可调,在一定掺杂水平可制造 I. INTRODUCTION Polysilicon, as a piezoresistive material, can be deposited on ceramic, glass, SiO_2, Si_3N4 and other insulating materials by chemical vapor deposition process to produce an SOI structure pressure sensor with high temperature Pressure sensors and more sensitive touch-sensitive sensors provide a solid foundation of processes. Polysilicon pressure sensor to avoid the proliferation of pressure sensor pn junction leakage problem, broaden the device’s operating temperature range, high temperature up to 200 ℃. At the same time, the temperature coefficient of the polysilicon resistor is adjustable with the doping concentration and can be fabricated at a certain doping level