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本文分析了扩散型或漂移型或具有电荷放大效应的光阴极的量子效率。提出了具有内场或外场的a-Si∶H光电发射模型。其结构是p-i-n a-Si∶H/Bi_2S_3或SnO_2-a-Si∶H-Al∶Cs∶Q_b估算了它们的量子效率和积分灵敏度。二者的量子效率为1—1θ,灵敏度为10~3—10~3μA/lm。外场模型的实验表明,结构设计是正确的。
This paper analyzes the quantum efficiency of diffusive or drift photocathode or photocathode with charge amplification effect. A-Si: H photoelectric emission model with internal or external field is proposed. Its structure is p-i-n a-Si: H / Bi_2S_3 or SnO_2-a-Si: H-Al: Cs: Q_b to estimate their quantum efficiency and integral sensitivity. The quantum efficiency of the two 1-1θ, the sensitivity of 10 ~ 3-10 ~ 3μA / lm. Experiments in the field model show that the structural design is correct.