【摘 要】
：
We investigate the influence of interface charge on electrical performance of NbAlO/AlGaN/GaN metal-oxidesemiconductor high electron mobility transistors(MOSHEM
【机 构】
：
School of Microelectronics,Xidian University,Key Laboratory of Wide Band-Gap Semiconductor Materials
【出 处】
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Chinese Physics Letters
论文部分内容阅读
We investigate the influence of interface charge on electrical performance of NbAlO/AlGaN/GaN metal-oxidesemiconductor high electron mobility transistors(MOSHEMTs).Through C-V measurements and simulations,we find that the donor-type interface fixed charge density Q_(it) of 2.2×10~(13)cm~(-2) exists at the NbAlO/AlGaN interface,which induces the shift of the threshold voltage much more negative.Furthermore,a trap density of approximately 0.43×10~(13)-1.14×10~(13)cm~(-2)eV~(-1) is obtained at the NaAlO/AlGaN interface,which is consistent with the frequency-dependent capacitance and conductance measurement results.
We investigate the influence of interface charge on electrical performance of NbAlO / AlGaN / GaN metal-oxide semiconductor high electron mobility transistors (MOSHEMTs). Through CV measurements and simulations, we find that the donor-type interface fixed charge density Q_ (it) of 2.2 × 10 ~ (13) cm ~ (-2) exists at the NbAlO / AlGaN interface, which induces the shift of the threshold voltage much more negative. ~ (13) cm ~ (-2) eV ~ (1) is obtained at the NaAlO / AlGaN interface, which is consistent with the frequency-dependent capacitance and conductance measurement results.
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