Under global warming scenarios, the passive method of simply increasing the thermal resistance by raising the embankment......

Research on aging characteristics of epoxy resin(EP) under repetitive microsecond pulses is important for the design of ......

The interfacial electrification properties play an important role in the electrochemical corrosion reaction which leads ......

Previous reports about the thermal conductivities of VO2 showed various temperature dependences across metal-insulator t......

The interfacial electron transfer(IET) dynamics of single CdSe core/multilayer shell(CdS2MLZnCd-S1MLZnS1ML) quantum dots......

Anatase TiO2 shells assembled on hollow glass microspheres(HGM)with tunable morphologies were successfully prepared thro......

The feasibility of applying Capacitively Coupled Contactless Conductivity Detection(C~4D)technique to measurement of bub......

Structural, magnetic and electrical properties of the La0.7Ca0.3Co1–xMnxO3(x=0, 0.7 and 1) samples prepared by a simple......

Simultaneous functionalization and reduction of graphene oxide(GO) is realized by refluxing of GO suspension with polyet......

Transparent electrode based on silver nanowires(Ag NWs) emerges as an outstanding alternative of indium tin oxide film e......

The structural,electronic and elastic properties of solid nitromethane are investigated under pressure by performing fir......

We report the observation of spectral broadening induced by 200 femtosecond laser pulses with the repetition rate of 1 k......

Natural ester is a kind of fire-resistant and environmentally friendly dielectric liquid, which has already been widely ......

Partial discharge (PD) under a sequence of high-repetition-rate square pulses is one of the key factors leading to prema......

Vacuum-assisted spin-coating is an effective polymer filling technology for sidewall insulating of through-silicon-via(T......

SmB_6 has been a well-known Kondo insulator for decades, but recently attracts extensive new attention as a candidate to......

The growth of semi-insulating SI: InP (Fe) using N_2+H_2 as a carrier gas through chloride vapor phase(VPE) is reported ......

We have measured the deep energy level of the InP: Fe which is semi -insulator through the method of OTCS. The effect of......

GaAs single crystal has been grown in recoverable satellite. Hall measurements indicate that the GaAs shows semi-insula......

During the past several years, the research and de-velopment of InP material has made great progress due to serving as t......

Undoped (ND) semi-insulating (SI) liquid encapsulated Czochralski (LEG) GaAs crystals were investigated by photocurrent......

InGaAsP/InP multiple quantum wells with quantum well intermixing have been prepared by impurity-free vacancy disordering......

Low-frequency oscillations in channel current are usually observed when measuring the GaAs MESFET’s output characterist......

SiNx:H films with different N/Si ratios are synthesized by plasma-enhanced chemical vapor deposition (PECVD). Compositio......

The growth of superconducting YBC single crystals with millimeter dimen-sions by Czochralski technigue is reported in t......

For eventually providing terahertz science with compact and convenient devices,terahertz (1～10THz) quantum-well photodete......

An analytical model to calculate electroluminescence (EL) efficiency of bilayer organic light-emitting devices, consider......

Semi-insulating(SI)GaAs doped with indium has been grown and characterized.The relationship between the dislocationdens......

This paper shows that the nonhomog-eneous temperature field of clinkeringzone in a shaft kiln is one of thesubstantial ......

In this paper the electrochemical characteristics of GaAs/EL junction,including the I-V,C-V curves,response rate for si......

The electrical characteristics of GaN schottky diode with and without the interfacial oxides are compared in this paper.......

Femtosecond pump-terahertz probe studies of carrier dynamics in semi-insulating GaAs have been investigated in detail fo......

In this paper we report on DC and RF simulations and experimental results of 4H-SiC metal semiconductor field effect tra......

Ga_xIn_(1-x)As_(1-y)Sb_y alloys have been grown by atmospheric pressure MOCVD on n-GaSb(Te-doped)substrate.The sohd com......

We have fabricated In0.53Ga0.47As/AlAs/InP resonant tunneling diodes(RTDs) based on the air-bridge technology by using e......

Two-inch semi-insulating SiC bulk crystals with resistivity higher than 1×106 Ωcm were achieved by vanadium doping dur......

This paper reports that heat insulating property of infrared reflective coatings is obtained through the use of pigments......

Type Ⅱ superlattices(SLs) short period InAs(4ML)/GaSb(8ML) were grown by molecular-beam epitaxy on lattice-mismatched G......

For semiconductors with localized intrinsic/impurity defects,intentionally doped or unintentionally incorporated, that h......

A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated.The amplified spontaneous ......

A 4 mm gap semi-insulating(SI) GaAs photoconductive switch(PCSS) was triggered by a pulse laser with a wavelength of 106......

A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT produ......

Chlorosulfonated polyethylene(CSP)has excellent heat resistance,low-temperature resistance,flame retardance,abrasion re......

On October 17th,Bayer Material Science an-nounced it has successfully started produc-tion at its new 350000 t/a dipheny......

In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with and without an Si-doped In0.49Ga0......

Experiments with the limited space-charge accumulation(LSA) mode of oscillation in a large gap semiinsulating (SI) GaAs ......

To research the effect of a deposited SiO_2 insulating layer on the resonance frequency modulation of an SOI nanowavegui......

The nonlinear photoresponse to a 1.56-μm infrared continuous wave laser in semi-insulating(SI) galliumarsenide(GaAs) is......

Preparation method of polyimide/EP2832768A1/Changchun Hipolyking Co.,Ltd.;Ding Mengxian;The present invention provides a......

The terahertz quantum-cascade laser(THz QCL) based on bound-to-continuum structure is demonstrated. The X-ray diffractio......