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本文提出了一种基于“沾笔”纳米刻蚀和电化学还原技术在表面上制备金属及半导体纳米结构的普适性方法。用这种方法可以在硅表面直接书写线宽度低于50纳米的多种金属和半导体组成的纳米结构。这种简单而有效的方法在精确控制位置和结构的功能化纳米器件制备中具有重要的潜在应用前景。
This paper presents a universal method for preparing metal and semiconductor nanostructures on the surface based on the “dip-pen” nano-etching and electrochemical reduction techniques. In this way, nanostructures of many metals and semiconductors with line widths below 50 nm can be directly written on the silicon surface. This simple and effective method has important potential applications in the preparation of functionalized nanodevices with precisely controlled position and structure.