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沟槽VDMOS产品为满足电性能力要求,源极区域必须与p型体区短接,为了达到此目的,传统的做法是,源极需要进行一次光刻,在p型体区中做出阻挡源区注入的胶块,然后再进行源区注入。提出几种其他的制作方式,可以省去源区光刻,但同样可以达到原来的目的。诸如,通过刻蚀Si孔将源区与p型体区短接;或者利用刻蚀出的沟槽侧壁做屏蔽进行源区注入;利用凸出沟槽的多晶硅做屏蔽进行源区注入。这些办法都可简化工艺流程,缩短制造周期,节约制造成本,增强器件可靠性,提高产品的竞争力。
To meet the requirement of electrical capability, the trench VDMOS product must have a source region that is shorted to the p-body region. To do this, it is common practice for the source to require a photolithographic etch to block the p-body region The source area of the injected plastic block, and then the source area injection. Several other fabrication methods are proposed to eliminate source lithography, but the same can be achieved. Such as shorting the source region and the p-type body region by etching the Si hole, or performing source region implantation by using the etched trench sidewalls as a mask, and performing source region implantation by using the protruding trench polysilicon as a mask. These methods can simplify the process, shorten the manufacturing cycle, save manufacturing costs, enhance device reliability, improve product competitiveness.