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提出了一种将极化效应引入GaN基异质结器件模拟中的方法. 在传统器件模拟软件中, 通过在异质结界面插入d 掺杂层, 利用其离化的施主或受主充当极化产生的固定电荷从而引入极化效应. 模拟了 Ga面生长和 N面生长的AlGaN/ GaN单异质结, 结果显示只有前者在异质结界面有载流子限制效应, 而后者没 有; Ga面生长的AlGaN/GaN异质结界面处自由电子面密度随Al组分以及AlGaN的厚度增加而增加. 以上模拟结果与其他报道中的实验以及计算结果一致, 说明该方法可有效地将极化效应引入GaN基异质结器件的模拟中.
A method of introducing the polarization effect into the simulation of GaN-based heterojunction devices is proposed.In the traditional device simulation software, by inserting a d-doped layer at the interface of the heterojunction and using the ionized donor or acceptor as a pole The results show that only the former has a carrier-confinement effect at the heterojunction interface, whereas the latter does not. Ga The free electron density at the AlGaN / GaN heterojunction interface increases with the increase of the Al content and AlGaN thickness.The simulation results are in good agreement with those reported in other reports and calculations, indicating that this method can effectively polarize Effect into the simulation of GaN-based heterojunction devices.