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In_2O_3 nanowires with uniform morphology and single crystalline structure were synthesized at low temperature of 400℃~450℃using InSb as the precursor via VLS mechanism.The nanowires have uniform diameter of about 40 nm and are up to tens of micrometres in length and grew along the[100]direction as established by high resolution electron microscopy.The electronic and local structures of ln203 nanowires,compared to that of In203 powder,have been studied with X-ray absorption fine structure(XAFS) at In K-edge and O K-edge.The XAFS results reveal the stronger In-O bonding in In_2O_3 nanowires compared to bulk In_2O_3.
In 2 O 3 nanowires with uniform morphology and single crystalline structure structure synthesized at low temperature of 400 ° C.~450 ° C. using InSb as the precursor via VLS mechanism.The nanowires have uniform diameter of about 40 nm and are up to tens of micrometres in length and grew along the [100] direction as established by high resolution electron microscopy. The electronic and local structures of ln203 nanowires, compared to that of In203 powder, have been studied with X-ray absorption fine structure (XAFS) at In K-edge and O K -edge.The XAFS results reveal the stronger In-O bonding in In 2 O 3 nanowires compared to bulk In 2 O 3.