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采用常压金属有机物气相沉积法生长ＡｌＡｓ／ＧａＡｓ周期性反射膜，并利用双晶Ｘ射线衍射、扫描电子显微镜和记录式分光光度计等分析手段，对材料结构及光学性质进行了分析。实验结果表明，在７８０℃连续生长的薄膜结构和晶体质量都很好，但是反射率低；通过模拟计算，连续生长存在渐变层，而渐变层大大降低了反射率；在同样生长条件下间断生长得到较高反射率的薄膜材料。
The AlAs / GaAs periodic reflective film was grown by atmospheric pressure metal organic vapor deposition method. The structure and optical properties of the material were analyzed by means of double crystal X - ray diffraction, scanning electron microscopy and recording spectrophotometer. The experimental results show that the structure and crystal quality of the films grown at 780 ℃ are good, but the reflectivity is low. Through the simulation calculation, there is a graded layer for continuous growth, while the graded layer greatly reduces the reflectivity. Under the same growth conditions, Get higher reflectivity of the film material.