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Based on characteristics such as low barrier and high electron mobility of lattice matched In_(0.53)Ga_(0.47) As layer,InP-based Schottky barrier diodes(SBDs) exhibit the superiorities in achieving a lower turn-on voltage and series resistance in comparison with GaAs ones.Planar InP-based SBDs have been developed in this paper.Measurements show that a low forward turn-on voltage of less than 0.2 V and a cutoff frequency of up to 3.4 THz have been achieved.The key factors of the diode such as series resistance and the zero-biased junction capacitance are measured to be 3.32Ωand 9.1 fF,respectively.They are highly consistent with the calculated values.The performances of the InP-based SBDs in this work,such as low noise and low loss,are promising for applications in the terahertz mixer,multiplier and detector circuits.
Based on characteristics such as low barrier and high electron mobility of lattice matched In_ (0.53) Ga_ (0.47) As layer, InP-based Schottky barrier diodes (SBDs) exhibit superior superior in achieving a lower turn-on voltage and series resistance in comparison with GaAs ones. Planar InP-based SBDs have been developed in this paper. Measures show that a low forward turn-on voltage of less than 0.2 V and a cutoff frequency of up to 3.4 THz have been achieved. The key factors of the diode such as series resistance and the zero-biased junction capacitance are measured to 3.32 Ω and 9.1 fF, respectively. They are highly consistent with the calculated values. The performances of the InP-based SBDs in this work, such as low noise and low loss , are promising for applications in the terahertz mixer, multiplier and detector circuits.