瑞士日内瓦 Battelle 发展公司试制成功了一种制作硅——兰宝石 MOS 微型电路的新方法。Battelle 技术人员采用直接地把硅选择地淀积到兰宝石衬底上的方法,取代了用普通的光刻技术来腐蚀厚硅层的方法。这是通过处理选择区域的钽的不纯度而达到的。在这些区域内,硅的淀积是很简单的。这种方法能够克服其它技术所产生的如腐蚀不足和图形分辨率不 Battelle Development Co., Geneva, Switzerland, trial-produced a new method for making silicon-sapphire MOS microcircuits. Battelle technicians have adopted a method of selectively depositing silicon selectively onto sapphire substrates instead of using conventional photolithography to etch thick silicon layers. This is achieved by handling the tantalum impurity in the selected area. In these areas, the deposition of silicon is very simple. This method can overcome other technologies such as lack of corrosion and graphics resolution does not