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一、引言对结构简单的MOS电容进行C—V特性测试是MOS电路中检查SiO_2等界面质量及钝化效果的重要手段之一,这种检测方法早已被研究、生产部门所采用。在以往的测量中,需将特定条件下画出的C—V曲线与理想曲线比较,再从有关图表中查出数据进行计算来分析Si-SiO_2系统中存在的缺陷和沾污的类型及含量.这一过程既复杂又繁锁,而且由于连续查表,容易带入人为误差和积累误差,对测量的准确性有一定影响。测量一点尚且如此麻烦,
I. INTRODUCTION Testing C-V characteristics of MOS capacitors with simple structure is one of the most important ways to check the interface quality and passivation effect of SiO 2 in MOS circuits. The detection method has long been used in research and production departments. In previous surveys, the C-V curve drawn under specific conditions was compared with the ideal curve, and then the data found in the relevant chart were calculated to analyze the type and content of defects and stains present in the Si-SiO 2 system The process is both complicated and cumbersome, and because of the continuous look - up table, it is easy to bring in human errors and accumulated errors, which have an impact on the accuracy of measurement. Measuring a bit still so troublesome,