原子层沉积制备Ta_2O_5薄膜的光学特性研究

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以乙醇钽[Ta(OC2H5)5]和水蒸气为前驱体,采用原子层沉积(ALD)方法分别在基板温度为250℃和300℃的K9和石英衬底上制备了Ta2O5光学薄膜。采用分光光度计、X射线光电子能谱(XPS)、X射线衍射(XRD)、扫描电子显微镜(SEM)和原子力显微镜(AFM)等手段对薄膜的光学特性、微结构和表面形貌进行了研究。结果表明,用ALD方法制备的Ta2O5薄膜在刚沉积和350℃退火后均为无定形结构,而250℃温度下沉积的薄膜其表面粗糙度低,聚集密度很高,光学均匀性优,在中紫外到近红外均表现出很好的光学特性,可以作为高折射率材料很好地应用于光学薄膜中。 Ta2O5 optical thin films were prepared on the K9 and quartz substrates with substrate temperature of 250 ℃ and 300 ℃ respectively by atomic layer deposition (ALD) method using tantalum (Ta (OC2H5) 5] and water vapor as precursors. The optical properties, microstructure and surface morphology of the films were studied by spectrophotometer, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) . The results show that the Ta2O5 films prepared by ALD method are both amorphous and annealed at 350 ℃. However, the films deposited at 250 ℃ have low surface roughness, high density and good optical uniformity, Ultraviolet to near infrared all show good optical properties and can be used as high refractive index materials well in optical thin films.
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