论文部分内容阅读
本文对SiGe/Si HBT及其Si兼容工艺进行了研究,在研究了一些关键的单项工艺的基础上,提出了五个离速SiGe/Si HBT结构和一个低噪声SiGe/Si HBT结构,并已初步研制成功台面结构SiGe/Si HBT和低噪声SiGe/Si HBT,为进一步高指标的SiGe/Si HBT的研究建立了基础。
In this paper, SiGe / Si HBT and its Si-compatible process are studied. Based on the study of some key single processes, five fast SiGe / Si HBT structures and one low-noise SiGe / Si HBT structure are proposed. The preliminary development of mesa structure SiGe / Si HBT and low-noise SiGe / Si HBT has laid the foundation for the further research of high-index SiGe / Si HBT.