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采用高温固相反应法制备6 0mmYBa2 Cu3O7-x(YBCO)靶材 ;通过直流磁控溅射后退火法制备具有不同过渡层 (SiO2 /Si,ZrO2 /SiO2 /Si)的薄膜 .对于Si为衬底的YBa2 Cu3O7-x薄膜 ,当x >0 .5时 ,薄膜的导电性由超导态转向半导体态 .进行了X射线衍射(XRD)分析 ,电阻温度系数 (RTC)和Hall系数测试 ,并进行Raman散射的微观分析实验 ,认为该半导体薄膜可用作室温工作的红外测辐射热计 (Bolometer)灵敏元 .
High-temperature solid-state reaction method was used to prepare 6 0mmYBa2 Cu3O7-x (YBCO) target. Films with different transition layers (SiO2 / Si, ZrO2 / SiO2 / Si) were prepared by DC magnetron sputtering. When Y> 0.5, the conductivity of the thin film is switched from the superconducting state to the semiconducting state. The XRD, RTC and Hall coefficient of the YBa2 Cu3O7- The microscopic analysis of Raman scattering was carried out and the semiconductor thin film was considered to be an infrared bolometer cell operating at room temperature.