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超大规模集成电路（ＶＬＳＩ）线宽的不断缩小，促进了光刻技术的发展和分辨率的提高，使分辨率已进入到深亚微米区域。光学光刻分辨率的提高是依靠缩短曝光波长、增大透镜系统的数值孔径（ＮＡ）、采用新技术改进掩模和光学系统的设计以及提高光致抗蚀剂的性能来实现的。在简要的介绍了ＶＬＳＩ发展趋势的基础上，论述了深紫外光刻（ＤＵＶＬ）、极紫外光刻（ＥＵＶＬ）和Ｘ射线光刻技术取得的重要成果及面临的问题和可能解决的途径。
The shrinking VLSI line width has led to advances in photolithography and increased resolution, bringing resolution into deep submicron regions. Increased optical lithography resolution is achieved by shortening the exposure wavelength, increasing the numerical aperture (NA) of the lens system, using new technologies to improve the design of masks and optical systems, and improving the performance of photoresists. Based on the brief introduction of the development trend of VLSI, the important achievements, problems and possible solutions of deep ultraviolet lithography (DUVL), extreme ultraviolet lithography (EUVL) and X-ray lithography are discussed.