Radio frequency(RF) reactive magnetron sputtering was utilized to deposit Li-doped and undoped zinc oxide(Zn O) films on silicon wafers. Various Ar/O2 gas ratios by volume and sputtering powers were selected for each deposition process. The results demonstrate that the enhanced Zn O films are obtained via Li doping. The average deposition rate for doped Zn O films is twice more than that of the undoped films. Both atomic force microscopy and scanning electron microscopy studies indicate that Li doping significantly contributes to the higher degree of crystallinity of wurtzite–Zn O. X-ray diffraction analysis demonstrates that Li doping promotes the(002) preferential orientation in Li-doped Zn O films. However, an increase in the Zn O lattice constant, broadening of the(002) peak and a decrease in the peak integral area are observed in some Li-doped samples, especially as the form of Li2 O. This implies that doping with Li expands the crystal structure and thus induces the additional strain in the crystal lattice. The oriented-growth Li-doped Zn O will make significant applications in future surface acoustic wave devices. Radio frequency (RF) reactive magnetron sputtering was utilized to deposit Li-doped and undoped zinc oxide (Zn O) films on silicon wafers. Each Ar / O2 gas ratio by volume and sputtering powers were selected for each deposition process. the enhanced Zn O films are obtained via Li doping. The average deposition rate for doped Zn O films is twice more than that of the undoped films. Both atomic force microscopy and scanning electron microscopy studies that that doping dramatically contributes to the higher degree of crystallinity of wurtzite-Zn O. X-ray diffraction analysis analysis demonstrates that Li doping promotes the (002) preferential orientation in Li-doped Zn O films. However, an increase in the Zn O lattice constant, broadening of the (002) peak and a decrease in the peak integral area are observed in some Li-doped samples, especially as the form of Li2 O. This implies that doping with Li expands the crystal structure and thus induces the additional strain in the crystal lattice. The oriented-growth Li-doped Zn O will make significant applications in future surface acoustic wave devices.