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随着GaInP/GaInAs/GaInNAs/Ge四结太阳电池的快速发展,设计并镀制可与四结太阳电池更加匹配的光学减反膜系变得尤为重要。实验中通过TFCale软件理论模拟了3对TiO_2/SiO_2(6层)减反膜系,其中理论模拟膜系与实际镀制膜系反射率曲线重合性良好。实际制备并讨论了离子源功率、薄膜物理厚度等参数对减反膜系反射率的影响。发现得到优异反射率的关键在于对第二层SiO_2薄膜物理厚度的控制,尤其是在400~1 000 nm波段内。实验中制备的3对TiO_2/SiO_2(6层)减反膜系在280~1 400 nm波段内其反射率均小于10%,特别是在影响四结太阳电池限流结的Ga In As/Ga In NAs两结波段(670~900 nm/900~1 100 nm)内,其反射率均在5%以下。
With the rapid development of GaInP / GaInAs / GaInNAs / Ge quaternary solar cells, it is particularly important to design and coat an optical antireflection film that is more compatible with the quadruple junction solar cells. In the experiment, three pairs of TiO 2 / SiO 2 (6 layers) antireflective films were simulated by the theory of TFCale software. The coincidence between the theoretical simulated film and the actual coated film reflectance curve is good. The influences of ion source power, physical thickness of the film and other parameters on the reflectivity of the anti-reflection coating were prepared and discussed. The key to achieving excellent reflectance lies in the control of the physical thickness of the second layer of SiO2 film, especially in the 400-1000 nm band. The three pairs of TiO 2 / SiO 2 (6 layers) antireflective films prepared in the experiment have reflectivity of less than 10% in the wavelength band of 280-1 400 nm, especially in Ga In As / Ga InNAs two junction band (670 ~ 900 nm / 900 ~ 1 100 nm), the reflectivity are below 5%.