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本文提出了一种新的提高多晶硅发射极晶体管和电路速度的方法，通过对器件外基区下对应的外延层区域进行离子补偿注入，降低相应外延层中的净掺杂浓度，有效地减小了外基区－集电区单位面积的集电结电容，有利于器件和电路速度的提高．由于内基区下对应的外延层浓度不变，对器件的直流特性无不良影响．本文给出了补偿注入研究结果和器件特性．
In this paper, a new method to increase the speed of polysilicon emitter transistor and circuit is proposed. By compensating the corresponding epitaxial layers in the outer base region of the device by ion compensation, the net doping concentration in the corresponding epitaxial layer is reduced and the effective reduction is achieved The external base area - collector area per unit area collector junction capacitance, conducive to the device and circuit speed. Due to the constant concentration of the corresponding epitaxial layer in the inner base region, there is no adverse effect on the DC characteristics of the device. This article gives the results of compensation injection studies and device characteristics.