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利用LP MOCVD系统生长了InGaN/GaNMQW紫光LED外延片 ,双晶X射线衍射测试获得了 2级卫星峰 ,室温光致发光谱的峰值波长为 399 5nm ,FWHM为 15 5nm ,波长均匀性良好。制成的LED管芯 ,正向电流2 0mA时 ,工作电压在 4V以下。
InGaN / GaNMQW violet LED epitaxial wafers were grown by LP MOCVD system. Two-dimensional satellite peaks were obtained by double crystal X-ray diffraction. The peak wavelength of the room-temperature photoluminescence spectrum was 399 5 nm and the FWHM was 15 5 nm. The wavelength uniformity was good. Made of LED die, the forward current of 20mA, the operating voltage below 4V.