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本文报道我们在国内率先研制的ＧａＡｓ／ＧａＡｌＡｓ中红外（３～５μｍ）量子阱探测器和双色量子阱红外探测器的制备和性能．ＧａＡｓ／ＧａＡｌＡｓ中红外量子阱探测器是光伏型，探测峰值波长为５．３μｍ，８５Ｋ下的５００Ｋ黑体探测率为３．０×１０９ｃｍ·Ｈｚ１／２／Ｗ，峰值探测率达到５×１０１１ｃｍ·Ｈｚ１／２／Ｗ，阻抗为５０ＭΩ．ＧａＡｓ／ＧａＡｌＡｓ双色量子阱红外探测器是偏压控制型的两端器件，在零偏压下该探测器仅在３～５μｍ波段有响应，响应峰值波长为５．３μｍ，８５Ｋ温度下５００Ｋ黑体探测率为３．０×１０９ｃｍ·Ｈｚ１／２／Ｗ，当偏压为２Ｖ时，该探测器的响应切换到８～１２μｍ波段，峰值响应波长为９．０μｍ，８５Ｋ温度下的黑体探测率为１．０×１０９ｃｍ·Ｈｚ１／２／Ｗ．
This article reports the preparation and performance of GaAs / GaAlAs mid-infrared (3-5 μm) quantum well detectors and two-color quantum well infrared detectors that we pioneered in China. The GaAs / GaAlAs mid-infrared quantum well detector is of photovoltaic type with a peak detection wavelength of 5.3μm, a 500K blackbody detection rate of 3.0 × 109cm · Hz1 / 2 / W at 85K and a peak detection rate of 5 × 1011cm · Hz1 / 2 / W, the impedance is 50MΩ. The GaAs / GaAlAs two-color quantum-well infrared detector is a bias-controlled, two-terminal device that responds only in the 3 to 5 μm band at zero bias with a peak response wavelength of 5.3 μm and a 500K blackbody detection at 85K The rate of 3.0 × 109cm · Hz1 / 2 / W, when the bias voltage is 2V, the detector’s response is switched to 8 ~ 12μm band, the peak response wavelength is 9.0μm, the detection rate of blackbody at 85K is 1 .0 × 109 cm · Hz1 / 2 / W.