TiNi thin films were sputter-deposited on circular single-cry stal silicon substrates un-der various sputtering parameters. The crystal structure and residual stress of the as-deposited films were determined by X-ray diffraction and substrate-curvature method. The phenomenon of stress-suppressed martensitic transformation was observed. R is considered that the residual stresses in SMA thin films based on circular substrates act as balanced biaxial tensile stresses. The status of equilibrant delays the align-ment of self-accommodated variants and the volume shrinkage during the martensitic transformation. TiNi thin films were sputter-deposited on circular single-cry stal silicon substrates un-der various sputtering parameters. The crystal structure and residual stress of the as-deposited films were determined by X-ray diffraction and substrate-curvature method. R is considered that the residual stresses in SMA thin films based on circular substrates act as balanced biaxial tensile stresses. The status of equilibrant delays the align-ment of self-accommodating variants and the volume shrinkage during the martensitic transformation.