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铝诱导非晶硅薄膜晶化可以降低退火温度、缩短退火时间 ,是制备多晶硅薄膜的一种重要方法 .在此基础上 ,通过在退火过程中加入电场加速了界面处硅、铝原子间的互扩散 ,实现了非晶硅薄膜的快速低温晶化 .实验结果表明 ,外加电场 ,退火温度为 4 0 0℃ ,退火时间为 6 0min时 ,薄膜的晶化率大于 6 0 % ;退火温度为 4 5 0℃退火时间为30min时 ,薄膜已经呈现明显的晶化现象 ;退火温度为 5 0 0℃退火时间为 15min时 ,薄膜的x射线多晶峰强度与非晶峰强度之比为未加电场的 3— 4倍
Aluminum-induced amorphous silicon thin film crystallization can reduce the annealing temperature, shorten the annealing time is an important method for the preparation of polycrystalline silicon thin films.On the basis of this, by adding an electric field in the annealing process to accelerate the interaction between silicon and aluminum atoms The results show that the crystallization rate of the film is more than 60% when the annealing temperature is 400 ℃ and the annealing time is 60 min, and the annealing temperature is 4 When the annealing temperature is 50 ℃ and the annealing time is 30min, the film has been obviously crystallized. When the annealing temperature is 500 ℃ and the annealing time is 15min, the ratio of X-ray polycrystalline peak intensity to amorphous peak intensity of the film is 3-4 times