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利用保偏光纤MZ干涉仪测量了光学各向异性薄膜材料的电光效应.与传统MZ干涉仪相比,该干涉仪中所有的部件都采用保偏光纤进行连接.光源采用一个偏振输出最大功率为10mW的DFB激光器,用以得到高的信噪比.用该激光器测量超晶格材料的电光系数,同时用GaAs,KTP和GaN材料作为对比材料.测量的电光系数和已有结果有较好的可比性.
The electro-optic effect of optically anisotropic thin film material was measured by polarization-maintaining fiber MZ interferometer.Compared with the traditional MZ interferometer, all the components in the interferometer were connected by polarization-maintaining fiber.The light source uses a polarization output maximum power of 10mW DFB laser was used to obtain high signal-to-noise ratio.The electro-optic coefficient of the superlattice material was measured by this laser with GaAs, KTP and GaN materials as the contrast material.The measured electro-optic coefficient had good Comparability.