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Band structure of wurtzite(WZ) GaAs nanowires(NWs) is investigated by using photoluminescence measurements under hydrostatic pressure at 6K.We demonstrate that WZ GaAs NWs have a direct bandgap transition with an emission energy of 1.53 eV,corresponding to the optical transition between conduction band Γ_(7C) and valence band Γ_(9V) in WZ GaAs.The direct-to-pseudodirect bandgap transition can be observed by applying a pressure approximately above 2.5 GPa.
Band structure of wurtzite (WZ) GaAs nanowires (NWs) is investigated by using photoluminescence measurements under hydrostatic pressure at 6K.We demonstrate that WZ GaAs NWs have a direct bandgap transition with an emission energy of 1.53 eV, corresponding to the optical transition between conduction band Γ_ (7C) and valence band Γ_ (9V) in WZ GaAs. The direct-to-pseudodirect band gap transition can be observed by applying a pressure above 2.5 GPa.