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据日本《O Plus E》1992年第151期报道,日本大同氧(株)和东京大学先端科学技术研究中心共同研制成适于Si系薄膜生长组合式的VCE(真空化学外延)设备,系用原先GaAs,AlGaAs等化合物半导体外延生长研制的系统。 VCE设备的生长压力为133×(10~(-4)～10~(-3)Pa。由于采用喷出几股分子束,由孔板把原料气体均匀地供给衬底表面,不用转动衬底,就可均匀生长多枚大面积衬底。
According to Japan’s “O Plus E” 1992 No. 151 reported that Japan’s Datong Oxygen Co., Ltd. and the University of Tokyo advanced science and technology research center jointly developed for Si-based thin film growth combined VCE (vacuum chemical epitaxy) equipment, Department of The original system of GaAs, AlGaAs compound semiconductor epitaxial growth developed. The growth pressure of the VCE apparatus is 133 × (10 -4 to 10 -3 Pa.) Since several jet of molecular beam is jetted, the raw material gas is uniformly supplied to the surface of the substrate by the orifice plate without rotating the substrate , You can even grow more than one large area substrate.