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为了研制出高性能电荷耦合器件(CCD),减少硅片清洗工艺Fe离子沾污是关键。利用表面光电压(SPV)法,研究了硅片清洗过程的Fe离子沾污。研究表明,SPM(H2SO4/H2O2)→SC-1清洗,去除Fe离子污染的效果比较差;用SPM→SC-1→SC-2清洗,去除Fe离子杂质的效果较好,Fe离子污染减少了2个数量级。增加SC-1和SC-2清洗次数可以减少Fe离子沾污,但效果不明显。当化学试剂中金属杂质含量由1×10-8 cm-3减少到1×10-9 cm-3,清洗工艺Fe离子沾污减少到8.0×1010 cm-3。
In order to develop a high-performance charge-coupled device (CCD), reducing the wafer cleaning process Fe ion contamination is the key. The surface photovoltage (SPV) method was used to study the fouling of Fe ions in silicon wafer cleaning process. The results show that the effect of removing Fe ions from SPM (H2SO4 / H2O2) → SC-1 cleaning is poor, and the effect of removing impurities of Fe ions is better and the Fe ion contamination is reduced by cleaning with SPM → SC-1 → SC-2 2 orders of magnitude. Increasing the number of SC-1 and SC-2 cleaning can reduce Fe ion contamination, but the effect is not obvious. When the content of metal impurities in the chemical reagent is reduced from 1 × 10-8 cm-3 to 1 × 10-9 cm-3, the contamination of the Fe ion in the cleaning process is reduced to 8.0 × 1010 cm-3.