本文给出了当前的IGBT模块封装设计的原则,重点是封装结构和可靠性之间的关系,特别是温度循环性能。复杂的IGBT模块内部含有不同的材料。因为不同的热膨胀系数,层间介面处的物理损坏会伴随着一系列温度循环而不断累积。IGBT模块的寿命周期主要依赖于其材料的组合和结构设计上。作为一种尝试,本文针对未来IGBT在较高的运行温度下的可能性,谈到了当前的热优化设计和键合技术研究。 This paper presents the current principles of IGBT module package design, with emphasis on the relationship between package structure and reliability, and in particular, temperature cycling performance. Complex IGBT modules contain different materials inside. Due to the different coefficients of thermal expansion, the physical damage at the interlayer interface accumulates with a series of temperature cycles. IGBT module life cycle depends mainly on the combination of materials and structural design. As an attempt, this paper addresses the current possibility of IGBTs at higher operating temperatures and discusses the current thermal optimization design and bonding technology.