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本文报道了采用选择区域生长（Ｓｅｌｅｃｔｉｖｅ ａｒｅａ ｇｒｏｗｔｈ， ＳＡＧ）方法，在 ＳｉＯ２作掩膜的 ＩｎＰ衬底上选择生长出高质量的 ＩｎＧａＡｓＰ－ＭＱＷ，并成功地制作出波长调谐范围达 ６．５ ｎｍ的可调谐 ＤＢＲ激光器和性能可靠的电吸收调制ＤＦＢ激光器
In this paper, high-quality InGaAsP-MQW is selectively grown on InP substrate with SiO2 as a mask by using the selective area growth (SAG) method, and the wavelength tuning range of 6.5 nm Tunable DBR lasers and reliable electro-absorption modulated DFB lasers