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采用碳化钒靶的磁控溅射方法在不同的Ar气压下制备了一系列碳化钒薄膜,利用能量分析光谱仪,X射线衍射,扫描电子显微镜,原子力显微镜和微力学探针研究了气压对薄膜成分、相组成、微结构以及力学性能的影响。结果表明磁控溅射VC陶瓷靶可以方便地制备晶体态的单相碳化钒薄膜,并且溅射气压对薄膜的化学成分、相组成、微结构以及相应的力学性有较大的影响。在溅射气压为2.4~3.2 Pa的范围内,可获得结晶程度好和硬度与弹性模量较高的碳化钒薄膜,其最高硬度和弹性模量分别为28,269 GPa。低的溅射气压(0.32~0.9 Pa)下,所得薄膜结晶较差且硬度较低;过高的溅射气压(>4.0 Pa),薄膜的溅射速率降低,结晶变差,其硬度和弹性模量亦随之降低。低气压下薄膜碳含量较高和高气压下溅射原子能量降低可能是薄膜结晶程度降低的主要原因。
A series of vanadium carbide films were prepared by magnetron sputtering with a vanadium carbide target under different Ar pressures. The effect of gas pressure on the composition of films was studied by using energy analysis spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy and micromechanical probe. , Phase composition, microstructure and mechanical properties. The results show that the magnetron sputtering VC ceramic target can be used to prepare single-phase vanadium carbide films in the crystalline state easily, and the sputtering gas pressure has a great influence on the chemical composition, phase composition, microstructure and mechanical properties of the films. Under the conditions of sputtering pressure of 2.4 ~ 3.2 Pa, vanadium carbide films with good crystallinity and high hardness and elastic modulus can be obtained with the highest hardness and elastic modulus of 28,269 GPa. Under the low sputtering pressure (0.32-0.9 Pa), the obtained film has poor crystallization and low hardness. When the sputtering pressure is too high (> 4.0 Pa), the sputtering rate of the film decreases and the crystallization deteriorates. The hardness and elasticity Modulus also decreases. The higher carbon content and the lower sputtering atom energy at low pressure may be the main reason for the decrease of the crystallinity of the films.