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采用普通光学光刻法制造了新的1/4μm栅GaAsMESFET,在12和32GHz之间频率范围,超过了所有已报导的FET而成为当今具有最好噪声系数的器件。
The new 1/4-micron gate GaAsMESFET was fabricated using conventional photolithography and surpassed all of the reported FETs in the frequency range between 12 and 32 GHz to be the device with the best noise figure available today.