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原料采用固液同成分配比,在LiNbO3(LN)晶体中掺入质量分数为0.1%CeO2和0.015%MnCO3,摩尔分数分别为0,1%,2%和3%的In,用提拉法生长In:Ce:Mn:LN晶体。测试了In:Ce:Mn:LN晶体的红外透射光谱和抗光损伤能力。结果表明:3%In:Ce:Mn:LN晶体的OH-振动吸收峰紫移到3508cm-1位置;其抗光损伤能力比Ce:Mn:LiNbO3晶体提高2个数量级以上。利用二波耦合光路测试晶体的写人时间(τw)、擦除时间(τe)和衍射效率(η),计算晶体的动态范围(M#),研究In3+掺量对Ce:Mn:LN晶体光折变性能的影响。结果表明:In:Ce:Mn:LN晶体是比Ce:Mn:LN晶体综合性能更好的全息存储材料。
The raw materials were mixed with solid and liquid components, and the LiNbO3 (LN) crystals were doped with 0.1% CeO2 and 0.015% MnCO3 with the mole fractions of 0, 1%, 2% and 3% In: Ce: Mn: LN crystals were grown. The infrared transmission spectra and optical damage resistance of In: Ce: Mn: LN crystals were tested. The results show that the OH-vibration absorption peak of 3% In: Ce: Mn: LN violet shifts to the position of 3508cm-1, and its optical damage resistance is more than 2 orders of magnitude higher than that of Ce: Mn: LiNbO3 crystal. The write time (τw), erase time (τe) and diffraction efficiency (η) of the crystal were measured by two-wave coupling optical path to calculate the dynamic range (M #) of the crystal. Effect of Foldability. The results show that the In: Ce: Mn: LN crystal is a better holographic storage material than the Ce: Mn: LN crystal.