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金属有机物化学汽相淀积(Metal Organic Chemical Vapor Deposition, MOCVD) 它作为生长GaAs晶体的大量生产技术,从十几年前就开始研究了,近年来在生长异质结用的晶体方面,研究活动更为活跃。生长Ⅲ-Ⅴ族化合物,可采用Ⅲ族金属元素的有机物(三甲基镓等)和Ⅴ族元素的氢化物(砷烷等)气体的热分解反应。目前正研究比较它与MBE的优缺点。一般认为优于MBE的地方是:(1)可以用控制气体流量的方法来控制组成和杂质的掺杂量;(2)可采用比较简单而廉价的装置;(3)生长速度快、操作时间短等。这些都是适于大量生产的条件。本方法还有其他名
Metal Organic Chemical Vapor Deposition (MOCVD) As a mass-produced technology for growing GaAs crystals, it has been studied more than a decade ago. In recent years, research on the growth of heterojunction crystals More active. The group III-V compound is grown by a thermal decomposition reaction of a group III metal element-containing organic substance (such as trimethylgallium) and a group V element hydride (arsine) gas. It is currently studying the advantages and disadvantages of comparing it with MBE. It is generally considered superior to MBE in that: (1) the amount of doping of the composition and impurities can be controlled by gas flow control; (2) relatively simple and inexpensive means can be used; (3) the growth rate is fast and the operating time Short and so on. These are conditions suitable for mass production. There are other names for this method