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通过在宽区GaSb基半导体激光器波导中引入鱼骨型微结构,实现了瓦级激光输出并且改善了侧向发散角.本文通过分析微结构的刻蚀深度对激光功率和远场特性的影响,研究并发现了微结构的引入可以明显的提高激光器输出功率,同时深刻蚀的微结构对降低模式数和侧向发散角有着更明显的改善作用.相比于未引入微结构的激光器,引入深刻蚀微结构的宽区激光器侧向95%功率定义的远场发散角降低了大约57%,并且实现了超过1.1 W的最大连续输出功率.
By introducing a fishbone-type microstructure into a wide-area GaSb-based semiconductor laser waveguide, a watt-level laser output is achieved and the lateral divergence angle is improved.Through analyzing the influence of the etching depth of the microstructure on the laser power and far-field characteristics, It is found that the introduction of microstructures can significantly improve the output power of the laser, while the deep etching of the microstructure has a more significant improvement in reducing the number of modes and the lateral divergence angle.Compared with the laser without the introduction of microstructures, the introduction of profound The wide-area laser with erode microstructure reduces the far-field divergence angle defined by 95% of the power laterally by about 57% and achieves a maximum continuous output power of more than 1.1W.