论文部分内容阅读
以热氧化的p型硅(SiO2/Si)为衬底,运用金属有机化学气相淀积(MOCVD)技术以铪基金属有机源和高纯氨为反应气体在其上淀积HfNx薄膜样品。薄膜结构信息用RBS技术、XRD技术及X射线反射率(XRR)计等来表征。实验结果表明,HfNx薄膜中N与Hf原子组分比为1.15;薄膜为多晶薄膜且沿(111)方向择优生长;薄膜表面平整,与衬底界面粗糙度小。
HfNx thin film samples were deposited on the substrate by thermal oxidation of p-type silicon (SiO2 / Si) using metalorganic chemical vapor deposition (MOCVD) with hafnium-based metal organic source and high purity ammonia as reaction gases. The information of the film structure is characterized by RBS technique, XRD technique and X-ray reflectance (XRR) meter. The experimental results show that the composition ratio of N to Hf atoms in HfNx thin films is 1.15. The films are polycrystalline thin films and grow preferentially along the (111) direction. The surface of the thin films is smooth and the interface roughness with the substrate is small.