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The LPE growth of quaternary InAs_(1-x-y)P_xSb_y with x=0.2 and y=0.09 on InAs substrate has been studied.This composi-tion is very suitable for the laser and detector applications at about 2.5μm.We show that in InAsPSb/InAs system there is a de-terminate relation between the surface morphology and the lattice mismatch of the epi-wafers,by which we can easily control themelt composition to grow high quality hetero-structures.The reason has been discussed.The p-n junctions with fairly good car-rier profile have been prepared in this system.
The LPE growth of quaternary InAs_ (1-xy) P_xSb_y with x = 0.2 and y = 0.09 on InAs substrate has been studied. This composi tion is very suitable for the laser and detector applications at about 2.5 μm. We show that in InAsPSb / InAs system there is a de-termination relation between the surface morphology and the lattice mismatch of the epi-wafers, by which we can easily control themelt composition to grow high quality hetero-structures. The reason has been discussed.The pn junctions with fairly good car-rier profile have been prepared in this system.