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采用传统陶瓷工艺制作溅射靶材,通过射频磁控溅射法在Al2O3基片上制备了Mn-Co-Ni-O系NTC薄膜。利用X射线衍射仪(XRD)、原子力显微镜(AFM)对不同退火温度下制备的NTC薄膜的结构和形貌进行表征。经过蒸发电极、内电极图形化、淀积二氧化硅钝化层等工艺,将薄膜制成0805规格NTC热敏电阻器。利用高低温试验箱等测试系统对其性能进行测试,研究了退火温度对薄膜阻温特性的影响。结果表明,随着退火温度的升高,晶粒逐渐长大,当退火温度为950℃时,晶粒大小均匀,成相平整致密;材料常数B随着退火温度的升高而增大。
The sputtering targets were fabricated by traditional ceramic technology. The Mn-Co-Ni-O based NTC thin films were prepared on the Al2O3 substrate by RF magnetron sputtering. The structure and morphology of NTC films prepared at different annealing temperatures were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). After the evaporation electrode, the internal electrode pattern, the deposition of silicon dioxide passivation layer and other processes, the film made of 0805 specifications NTC thermistor. The performance of the film was tested by using the test system such as high and low temperature chamber, and the influence of annealing temperature on the temperature resistance of the film was studied. The results show that with the increase of annealing temperature, the grains grow up gradually. When the annealing temperature is 950 ℃, the grain size is uniform and the phase is compact. The material constant B increases with the increase of annealing temperature.