优化设计了既能实现较小垂直方向远场发散角，又能降低腔面光功率密度的ＩｎＧａＡｓ／ＧａＡｓ／ＡｌＧａＡｓ应变层量子阱激光器，并计算了该结构激光器实现基横模工作的脊形波导结构参数。利用分子束外延生长了ＩｎＧａＡｓ／ＧａＡｓ／ＡｌＧａＡｓ应变量子阱激光器材料并研制出基横模输出功率大于１４０ｍＷ，激射波长为９８０ｎｍ的脊形波导应变量子阱激光器，其微分量子效率为０．８Ｗ／Ａ，垂直和平行结平面方向远场发散角分别为２８°和６．８° The InGaAs / GaAs / AlGaAs strained quantum well laser is designed and optimized, which can realize both the small vertical divergence angle and the low optical power density of the cavity surface. The ridge waveguide Structural parameters. The InGaAs / GaAs / AlGaAs strained quantum well laser material was grown by molecular beam epitaxy and a ridge waveguide strain quantum well laser with a basal transverse mode output of more than 140mW and a lasing wavelength of 980nm was developed. Its differential quantum efficiency was 0.8W / A. The far-field divergence angles of the vertical and parallel junction planes are 28 ° and 6.8 °, respectively