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采用飞秒脉冲激光沉积系统,在Si(111)衬底上制备了a轴和c轴择优取向的Bi4Ti3O12薄膜.X射线衍射(XRD)表明:室温(20℃)下沉积的Bi4Ti3O12/Si(111)薄膜呈c轴择优取向,晶粒的平均直径为20nm.在500℃沉积的Bi4Ti3O12/Si(111)薄膜呈a轴择优取向.测量了薄膜的电滞回线和Ⅰ-Ⅴ特性曲线,并用分布参数电路研究了Bi4Ti3O12薄膜的,Ⅰ-Ⅴ特性曲线和铁电性的关联性.a轴择优取向Bi4Ti3O12薄膜的剩余极化强度Pr=15μC/cm2,矫顽力Ec=48kV/cm.
The a-axis and c-axis preferred Bi4Ti3O12 thin films were prepared on Si (111) substrates using femtosecond pulse laser deposition system. X-ray diffraction (XRD) shows that the Bi 4 Ti 3 O 12 / Si (111) films deposited at room temperature (20 ° C) have a preferred c-axis orientation with an average grain diameter of 20 nm. The Bi4Ti3O12 / Si (111) films deposited at 500 ℃ have a preferred orientation along the a-axis. The hysteresis loop and Ⅰ-Ⅴ characteristic curves of the films were measured. The relationship between the Ⅰ-Ⅴ characteristic curves and the ferroelectricity of Bi4Ti3O12 thin films was investigated by using distributed parameter circuit. The remanent polarization Pr of the a-axis preferred orientation Bi4Ti3O12 film is 15μC / cm2 and the coercive force Ec is 48kV / cm.