发光二极管(LED)微阵列芯片在工作时积累的热量使结温过高,进而对LED微阵列芯片造成一系列不利影响,严重降低LED微阵列芯片工作的可靠性,甚至造成永久性损坏。散热问题是制约LED微阵列芯片工作性能提高的关键因素,是LED微阵列芯片在制备过程中亟待解决的问题之一。利用有限元分析软件,针对AlGaInP材料LED微阵列建立了有限元模型,详细介绍了实体模型建立、网格划分以及边界条件的施加方法。瞬态分析了在脉冲电流驱动下,单个单元和3×3单元工作时阵列的温度场分布,以及温度随时间的变化规律。为了改善阵列芯片的散热性能,设计了一种热沉结构,模拟分析了热沉结构对阵列温度分布的影响。 The heat accumulated during the operation of the LED microarray chip causes the junction temperature to be too high, which in turn causes a series of adverse effects on the LED microarray chip, seriously reducing the reliability of the LED microarray chip and even causing permanent damage. Heat dissipation is a key factor that restricts the improvement of the working performance of the LED microarray chip and is one of the problems to be solved urgently in the preparation process of the LED microarray chip. The finite element model of AlGaInP material LED microarray is established by finite element analysis software. The establishment of solid model, meshing and application of boundary conditions are introduced in detail. Transient analysis of the temperature field distribution of a single unit and 3 × 3 unit driven by the pulse current, as well as the temperature variation with time. In order to improve the heat dissipation performance of the array chip, a heat sink structure is designed and the influence of the heat sink structure on the array temperature distribution is simulated.