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我们用椭圆偏光法研究了As~+注入Si的损伤和退火效应.逐层测定结果表明,对150keV、10~(16)/cm~2的As~+注入,已形成非晶质层,折射率沿深度的分布图呈近似平台式.退火实验结果表明,600-700℃间有转变点,在高于此点的温度下退火,辐射损伤得到很大消除,并且表明辐射损伤比杂质砷对硅拆射率的影响大得多.高温退火后,椭圆偏振光测量结果出现一些新现象.还与背散射测量及电学测量进行了对比.本工作表明,椭圆偏光法亦是测定和研究离子注入引起的损伤的有用工具.
The damage and annealing effects of As ~ + implanted Si were studied by ellipsometry.The layer-by-layer measurements showed that the As ~ + implantation at 150 keV, 10 ~ (16) / cm ~ The distribution of the rate along the depth is approximately flat. The results of the annealing experiment show that there is a transition point between 600-700 ℃, annealing at a temperature above this point, the radiation damage is greatly eliminated, and shows that radiation damage than the impurity arsenic The influence of the demolition rate of silicon is much greater.After annealing at high temperature, there are some new phenomena in the measurement results of the ellipsometry and the comparison with the backscattering measurement and the electrical measurement.This work shows that the ellipsometry also measures and studies the ion implantation A useful tool for causing damage.