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采用窄禁带宽度材料GaAsSb作为异质结晶体管的基区材料 ,成功研制出了能有效降低电路工作电压和功率损耗的低开启电压的NPNInGaP/GaAsSb/GaAs双异质结晶体管 (doubleheterojunctionbipolartransistor,DHBT) .器件性能如下 :BE结的正向开启电压 (turn onvoltage)仅为 0 73V ;当IB=1μA/step时 ,直流增益达到了 10 0 ,BVCEO=5～ 6V .通过对基区不同Sb含量器件的比较得到 ,器件的直流特性与基区Sb的含量有关 .
The low open-voltage NPNInGaP / GaAsSb / GaAs double heterojunction transistor (DHBT) has been developed successfully by using GaAsSb as the band gap material for the heterojunction transistor. . The device performance is as follows: the forward junction turn-on voltage of BE junction is only 0 73V; when IB = 1μA / step, the direct current gain reaches 10 0 and BVCEO = 5 ~ 6V. The dc characteristics of the device are related to the Sb content of the base.