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采用微波电子回旋共振等离子体化学气相沉积 (MWPECRCVD)方法 ,使用不同的源气体 (CHF3 CH4 ,CHF3 C2 H2 ,CHF3 C6 H6 )体系制备了a C∶F∶H薄膜 .由于CH4 ,C2 H2 ,C6 H6 气体在等离子体中的分解反应不同导致了薄膜的沉积速率和结构上的差异 .红外吸收谱的结果表明 ,用C6 H6 CHF3作为源气体沉积的薄膜中几乎不含H ,而用C2 H2 CHF3所沉积的薄膜中的含氟量最高 ,其相应的C F振动峰位向高频方向偏移 .薄膜的真空退火结果表明 ,a C∶F∶H薄膜的热稳定性除了取决于薄膜的CC键浓度外 ,还与CC键和其他键结构的关联有关 ,此外 ,源气体对薄膜的F C比和相对介电常量也有重要的影响
A C: F: H thin film was prepared by microwave electron cyclotron resonance plasma chemical vapor deposition (MWPECRCVD) using different source gases (CHF3 CH4, CHF3 C2 H2, CHF3 C6 H6) The dissociation reaction of H6 gas in the plasma led to the difference of the deposition rate and the structure of the thin film.The results of the infrared absorption spectrum showed that there was almost no H in the film deposited with C6H6 CHF3 as the source gas, The deposited films had the highest fluorine content and the corresponding peaks of the CF vibration shifted to the high frequency.The vacuum annealing results of the films showed that the thermal stability of a C: F: H films was not only dependent on the CC bond Concentration, but also with the CC bond and other key structure related, in addition, the source gas on the film FC ratio and relative dielectric constant also have a significant impact