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选用Au／Bi合金熔体在低温下实现了硅薄膜的外延生长，外延温度400℃～500℃，采用Sn源内的饱和硅来保护衬底的方法，以防止升温饱和过程中衬底的氧化。运用扫描电镜、C－V法及俄歇能谱对外延膜形貌和结深附近载流子浓度进行了观察和测量。
The epitaxial growth of the silicon thin film was achieved at low temperature by using Au / Bi alloy melt. The epitaxial temperature was 400 ℃ ~ 500 ℃. The substrate was protected by the saturated silicon in the Sn source to prevent the oxidation of the substrate during the temperature rising and saturation process. The epitaxial film morphology and the carrier concentration near junction were observed and measured by SEM, C-V method and Auger energy spectrum.