论文部分内容阅读
利用热丝化学气相沉积(HFCVD)技术,通过逐次调整气压、碳源浓度等生长参数,沉积了晶粒尺寸逐层减小的多层式金刚石薄膜。场发射扫描电镜(FE-SEM)和原子力显微镜(AFM)测试显示其表层晶粒平均尺寸约为20nm,厚度和表面平均粗糙度分别为35.81μm和18.8nm(2μm×2μm),皆能满足高频声表面波器件用衬底的要求。实验结果表明,多层式生长方法是制备声表面波器件用金刚石衬底的理想方法。
Multilayer diamond films with reduced grain size were deposited by hot filament chemical vapor deposition (HFCVD) technique by sequentially adjusting the growth parameters such as air pressure and carbon source concentration. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) tests showed that the average grain size of the surface layer was about 20nm and the average surface roughness and surface roughness were 35.81μm and 18.8nm (2μm × 2μm) Surface wave device substrate requirements. The experimental results show that the multilayer growth method is an ideal method for preparing diamond substrate for SAW devices.