针对国产锗硅异质结双极晶体管(SiGe HBT),采用半导体器件三维计算机模拟工具,建立单粒子效应三维损伤模型,研究不同偏置状态对SiGe HBT单粒子效应的影响.分析比较不同偏置下重离子入射器件后,各端口电流瞬变峰值和电荷收集量随时间的变化关系,获得SiGe HBT单粒子效应与偏置的响应关系.结果表明:不同端口对单粒子效应响应的最劣偏置不同,同一端口电荷收集量和瞬变电流峰值的最劣偏置也有所差异.载流子输运方式变化和外加电场影响是造成这种现象的主要原因. Aiming at the domestic SiGe HBT, a three-dimensional computer simulation tool for semiconductor devices was used to establish a three-dimensional damage model of single-particle effect to study the effect of different bias states on the single-particle effect of SiGe HBT. Under the heavy ion incident device, the relationship between the peak value of current transients and the charge collection amount changes with time, and the response relationship between single-particle effect and bias of SiGe HBT is obtained.The results show that the worst-case partial response to single-particle effect The worst-case bias of the same port charge collection and the peak value of transient current is also different, which is mainly caused by the change of carrier transport mode and the influence of applied electric field.